Atomic layer deposited films of Al₂O₃ on fluorine-doped tin oxide electrodes: stability and barrier properties

• Hana Krýsová,
• Michael Neumann-Spallart,
• Hana Tarábková,
• Pavel Janda,
• Ladislav Kavan and
• Josef Krýsa

Beilstein J. Nanotechnol. 2021, 12, 24–34, doi:10.3762/bjnano.12.2

• protection against the reduction of FTO. While bare FTO was reduced to Sn at −1.2 V vs Ag/AgCl in a neutral electrolyte, the Al2O3-coated FTO became reduction-resistant. AFM topography image (10 µm × 10 µm) of an FTO substrate (left) and of an FTO substrate coated with a 17 nm thick Al2O3 layer (right

Electrochemical nanostructuring of (111) oriented GaAs crystals: from porous structures to nanowires

• Elena I. Monaico,
• Eduard V. Monaico,
• Veaceslav V. Ursaki,
• Shashank Honnali,
• Vitalie Postolache,
• Karin Leistner,
• Kornelius Nielsch and
• Ion M. Tiginyanu

Beilstein J. Nanotechnol. 2020, 11, 966–975, doi:10.3762/bjnano.11.81

• previously obtained through anodizing GaAs(100) wafers in alkaline KOH electrolyte. An IR photodetector based on the GaAs nanowires is demonstrated. Keywords: anodization; crystallographically oriented pores; gallium arsenide (GaAs); nanowires; neutral electrolyte; photocurrent; porous GaAs; Introduction